In this letter, we report on experimental results of directly modulated single-transverse mode 1.3-μm InAs-InGaAs quantum-dot (QD) lasers in a wide temperature range. A 3.125-Gb/s data modulation over temperature with an extinction ratio up to 10 dB is reported. Moreover, 10-Gb/s eye patterns at 15 °C and 50 °C and 5-Gb/s modulation in the whole explored temperature range (15 °C-85 °C) are demonstrated. These results were obtained by exploiting heterostructures containing six layers of high modal gain InAs QDs grown without incorporation of p-doping in the active region or tunnelling injection structure implementation. QD lasers exhibited a saturation modal gain as high as 36.3 cm-1, ground state lasing from short cavities down to 400-μm length and a characteristic temperature of about 110 K in a large temperature range between 15 °C and 85 °C.
High-performance directly modulated 1.3-μm undoped InAs-InGaAs quantum-dot lasers
CINGOLANI, Roberto;DE VITTORIO, Massimo;
2007-01-01
Abstract
In this letter, we report on experimental results of directly modulated single-transverse mode 1.3-μm InAs-InGaAs quantum-dot (QD) lasers in a wide temperature range. A 3.125-Gb/s data modulation over temperature with an extinction ratio up to 10 dB is reported. Moreover, 10-Gb/s eye patterns at 15 °C and 50 °C and 5-Gb/s modulation in the whole explored temperature range (15 °C-85 °C) are demonstrated. These results were obtained by exploiting heterostructures containing six layers of high modal gain InAs QDs grown without incorporation of p-doping in the active region or tunnelling injection structure implementation. QD lasers exhibited a saturation modal gain as high as 36.3 cm-1, ground state lasing from short cavities down to 400-μm length and a characteristic temperature of about 110 K in a large temperature range between 15 °C and 85 °C.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
