We present a stochastic model which simulates electromigration damage in metallic interconnects by biased percolation of a random resistor network in the presence of degradation and recovery processes. The main features of experiments including Black’s law, times to failure distribution, current threshold for the onset of electromigration, etc are properly reproduced. Compositional effects showing up in early resistance changes measured on Al–0.5%Cu and Al–1%Si lines are also studied.
A Percolative Approach to Electromigration of Metallic Lines
PENNETTA, Cecilia;
2001-01-01
Abstract
We present a stochastic model which simulates electromigration damage in metallic interconnects by biased percolation of a random resistor network in the presence of degradation and recovery processes. The main features of experiments including Black’s law, times to failure distribution, current threshold for the onset of electromigration, etc are properly reproduced. Compositional effects showing up in early resistance changes measured on Al–0.5%Cu and Al–1%Si lines are also studied.File in questo prodotto:
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