The sol-gel process has been used to prepare osmium doped tin oxide thin films. The energy gap and refractive index were evaluated from optical measurements. Electrical characterization has been performed in a controlled atmosphere in order to investigate the influence of methane on the electrical conductance. New results have been obtained that make tin oxide doped with osmium a very interesting material for fabrication of low power consumption sensors for methane detection.
Physical properties of osmium doped tin oxide thin films
VASANELLI, Lorenzo;LICCIULLI, ANTONIO ALESSANDRO
1998-01-01
Abstract
The sol-gel process has been used to prepare osmium doped tin oxide thin films. The energy gap and refractive index were evaluated from optical measurements. Electrical characterization has been performed in a controlled atmosphere in order to investigate the influence of methane on the electrical conductance. New results have been obtained that make tin oxide doped with osmium a very interesting material for fabrication of low power consumption sensors for methane detection.File in questo prodotto:
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