This paper reports on the principles and application of H2-transport vapor phase epitaxy (H2T-VPE), an innovative growth technology for the fabrication of thick (i.e., up to several hundreds micron) CdTe and CdZnTe single crystal epitaxial layers for fabrication of X-ray detector arrays. Details and advantages of the method are illustrated along with properties of materials grown using a simple proof-of-concept H2T-VPE reactor. These growth experiments, besides showing the potentials of the method, allowed also to identify critical parameters of the H2T-VPE process and its control requirements. Such knowledge has been used to design, build and test an innovative H2T-VPE reactor prototype, whose characteristics and operations are here described.

Development of CdTe/CZT Epitaxial Technology for Fabrication of Large Area RT 1-100 keV X-ray Photon Detectors

LOVERGINE, Nicola;MARZO, Fabio;MANCINI, Anna Maria;
2004-01-01

Abstract

This paper reports on the principles and application of H2-transport vapor phase epitaxy (H2T-VPE), an innovative growth technology for the fabrication of thick (i.e., up to several hundreds micron) CdTe and CdZnTe single crystal epitaxial layers for fabrication of X-ray detector arrays. Details and advantages of the method are illustrated along with properties of materials grown using a simple proof-of-concept H2T-VPE reactor. These growth experiments, besides showing the potentials of the method, allowed also to identify critical parameters of the H2T-VPE process and its control requirements. Such knowledge has been used to design, build and test an innovative H2T-VPE reactor prototype, whose characteristics and operations are here described.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11587/116868
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