Thin (6-320 nm) indium tin oxide films were deposited by pulsed excimer (XeCl) laser ablation. The lowest electrical resistivity (1.6 x 10(-6) Ohm m) was measured for samples deposited on moderately heated (200 degreesC) glass substrates. Optical transmissivity of the films in the range 400-1200 nm is higher than 80%. Ultra-thin (similar to6-9 nm) films were deposited and successfully used as transparent electrodes in optoelectronic devices.

Characterization of Thin Indium Tin Oxide Films Deposited by Pulsed XeCl Laser Ablation

MARTINO, Maurizio;LUCHES, Armando;
2001-01-01

Abstract

Thin (6-320 nm) indium tin oxide films were deposited by pulsed excimer (XeCl) laser ablation. The lowest electrical resistivity (1.6 x 10(-6) Ohm m) was measured for samples deposited on moderately heated (200 degreesC) glass substrates. Optical transmissivity of the films in the range 400-1200 nm is higher than 80%. Ultra-thin (similar to6-9 nm) films were deposited and successfully used as transparent electrodes in optoelectronic devices.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11587/300150
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