Optical properties of 1.31 μm InGaAs quantum dot light emitting diodes (QD LED) grown in GaAs matrix by using metalorganic chemical vapor deposition (MOCVD) was investigated. It was found that the external quantum efficiency of the device was 0.03% despite of the low dot density. It was observed that the full width at half maximum of the device was as narrow as 24meV for the room temperature ground state transition at 1.31 μm. The results show that the quantum efficiency per dot is 30% higher than the other state of the art InGaAs/InGaAs QD LED.
1.31 mu m InGaAs quantum dot light-emitting diodes grown directly in a GaAs matrix by metalorganic chemical-vapor deposition
DE VITTORIO, Massimo;CINGOLANI, Roberto;
2004-01-01
Abstract
Optical properties of 1.31 μm InGaAs quantum dot light emitting diodes (QD LED) grown in GaAs matrix by using metalorganic chemical vapor deposition (MOCVD) was investigated. It was found that the external quantum efficiency of the device was 0.03% despite of the low dot density. It was observed that the full width at half maximum of the device was as narrow as 24meV for the room temperature ground state transition at 1.31 μm. The results show that the quantum efficiency per dot is 30% higher than the other state of the art InGaAs/InGaAs QD LED.File in questo prodotto:
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