The effect of precursors vapour stoichiometry on the morphological, structural and electrical properties of nominally undoped ZnTe grown on (100)GaAs by metalorganic vapour phase epitaxy is reported. The epilayers were grown at 350°C using dimethylzinc (Me2Zn) and di-isopropyltelluride, varying their molar flow rate ratios (MFRs) between 0.17 and 3.10. Growth in nearly stoichiometric (MFR=1.03) conditions results in best surface morphology, while samples grown in Te-rich conditions (MFR>1.7) showed micronsize hollow defects (with surface densities up to 1e6 cm-2) elongated in one of the <011> in-plane directions. The defects are associated to a local structural disorder of the material, ascribed to the formation of a Ga2Te3 extrinsic phase at the ZnTe/GaAs interface. Ohmic contacts to p-ZnTe epilayers were prepared by tungsten evaporation and annealing at 350°C. The RT hole concentration in the epilayers varies almost linearly with Me2Zn molar flow between 2e15 cm-3 and 5e16 cm-3. Temperature-dependent Hall measurements performed on samples grown at MFR≤1.03 demonstrate that the material p-type conductivity originates from a single acceptor centre with an ionisation energy between 94.7 meV and 118 meV, its concentration being in the 1e16 cm-3 range and slowly increasing with Me2Zn flow. We ascribe this acceptor to a complex formed by a substitutional carbon atom on a Te site and a donor on a nearest neighbor site (CTe-DZn), the donor impurity being further identified as Ga diffusing from the substrate.
Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers MOVPE-grown on (100)GaAs
PAIANO, PASQUALE;PRETE, Paola;LOVERGINE, Nicola;MANCINI, Anna Maria
2005-01-01
Abstract
The effect of precursors vapour stoichiometry on the morphological, structural and electrical properties of nominally undoped ZnTe grown on (100)GaAs by metalorganic vapour phase epitaxy is reported. The epilayers were grown at 350°C using dimethylzinc (Me2Zn) and di-isopropyltelluride, varying their molar flow rate ratios (MFRs) between 0.17 and 3.10. Growth in nearly stoichiometric (MFR=1.03) conditions results in best surface morphology, while samples grown in Te-rich conditions (MFR>1.7) showed micronsize hollow defects (with surface densities up to 1e6 cm-2) elongated in one of the <011> in-plane directions. The defects are associated to a local structural disorder of the material, ascribed to the formation of a Ga2Te3 extrinsic phase at the ZnTe/GaAs interface. Ohmic contacts to p-ZnTe epilayers were prepared by tungsten evaporation and annealing at 350°C. The RT hole concentration in the epilayers varies almost linearly with Me2Zn molar flow between 2e15 cm-3 and 5e16 cm-3. Temperature-dependent Hall measurements performed on samples grown at MFR≤1.03 demonstrate that the material p-type conductivity originates from a single acceptor centre with an ionisation energy between 94.7 meV and 118 meV, its concentration being in the 1e16 cm-3 range and slowly increasing with Me2Zn flow. We ascribe this acceptor to a complex formed by a substitutional carbon atom on a Te site and a donor on a nearest neighbor site (CTe-DZn), the donor impurity being further identified as Ga diffusing from the substrate.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
