The growth, processing and electrical characterization of n-type homo-epitaxial CdTe:I layers on detector grade CdTe single crystal wafers is reported as a preliminary technological step towards the fabrication of CdTe based p-i-n diode X-/gamma-ray detectors. n-type CdTe:I with resistivities around a few ohm cm and electron concentrations in the mid 1016 cm-3 is demonstrated. Reactive ion etching of the n-type epilayer around the Al electrode proved necessary to improve the I-V characteristic of a Al/n-CdTe:I/i-CdTe/Pt device structure.

Development of a homoepitaxial technology for fabrication of X-and gamma ray detectors based on CdTe p-i-n diodes

LOVERGINE, Nicola;PRETE, Paola;MANCINI, Anna Maria
2007-01-01

Abstract

The growth, processing and electrical characterization of n-type homo-epitaxial CdTe:I layers on detector grade CdTe single crystal wafers is reported as a preliminary technological step towards the fabrication of CdTe based p-i-n diode X-/gamma-ray detectors. n-type CdTe:I with resistivities around a few ohm cm and electron concentrations in the mid 1016 cm-3 is demonstrated. Reactive ion etching of the n-type epilayer around the Al electrode proved necessary to improve the I-V characteristic of a Al/n-CdTe:I/i-CdTe/Pt device structure.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11587/331179
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