The open-tube chemical vapour deposition has been used to grow epitaxial CdS films on CdTe substrates. The growth has been performed in a horizontal reactor, using polycristalline CdS as source material and hydrogen as transporting gas. The deposition and the source temperatures have been varied in the range (400÷800)°C and (700÷900)°C, respectively. The experimental values of the deposition rate have been compared with those calculated assuming a quasi-equilibrium model. The comparison shows that the growth process can be adequately described by such a model in a small-temperature region around 700°C. At lower or higher temperatures the surface kinetics becomes the limiting mechanism. Films grown at 700°C show also the best morphology. X-ray diffraction and photoluminescence measurements evidence that films grown in these conditions have a good structural quality.
Growth of epitaxial CdS films on CdTe substrates by chemical vapour deposition
MANCINI, Anna Maria;LOVERGINE, Nicola;DE BLASI, Carmelo;VASANELLI, Lorenzo
1988-01-01
Abstract
The open-tube chemical vapour deposition has been used to grow epitaxial CdS films on CdTe substrates. The growth has been performed in a horizontal reactor, using polycristalline CdS as source material and hydrogen as transporting gas. The deposition and the source temperatures have been varied in the range (400÷800)°C and (700÷900)°C, respectively. The experimental values of the deposition rate have been compared with those calculated assuming a quasi-equilibrium model. The comparison shows that the growth process can be adequately described by such a model in a small-temperature region around 700°C. At lower or higher temperatures the surface kinetics becomes the limiting mechanism. Films grown at 700°C show also the best morphology. X-ray diffraction and photoluminescence measurements evidence that films grown in these conditions have a good structural quality.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
