We investigate the thickness dependence of the amplified spontaneous emission (ASE) threshold and operational lifetime in air-poly(9,9-dioctylfluorene)(PF8)-glass asymmetric active waveguides. We show that the ASE threshold decreases with the film thickness up to about 200 nm, and increases for higher thicknesses. The ASE operational lifetime increases with the thickness up to about 300 nm, and it is almost thickness independent for higher thickness. We show that the observed results are related to the guided mode confinement in the waveguide and to the spatial overlap between the guided modes and the excited region in the film.

Thickness dependence of the amplified spontaneous emission threshold and operational stability in poly(9,9-dioctylfluorene) active waveguides

ANNI, Marco;PERULLI, ANDREA;MONTI, GIUSEPPINA
2012-01-01

Abstract

We investigate the thickness dependence of the amplified spontaneous emission (ASE) threshold and operational lifetime in air-poly(9,9-dioctylfluorene)(PF8)-glass asymmetric active waveguides. We show that the ASE threshold decreases with the film thickness up to about 200 nm, and increases for higher thicknesses. The ASE operational lifetime increases with the thickness up to about 300 nm, and it is almost thickness independent for higher thickness. We show that the observed results are related to the guided mode confinement in the waveguide and to the spatial overlap between the guided modes and the excited region in the film.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11587/372762
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