The electrochemical fabrication of a hybrid inorganic-organic field effect transistor (IOFET) is described. Ti-Zr mixed oxide (dielectric permittivity ∼45) grown by anodizing has been used as a dielectric, while 3,4-polyethylenedioxythiophene has been employed as a semiconducting polymer. The polymerization of 3,4-ethylenedioxythiophene on the oxide has been realized by a photoelectrochemical process. The metal/oxide/polymer junctions have been investigated by photocurrent spectroscopy and scanning electron microscopy. The output transistor characteristics have been recorded in order to test the performance of the junctions in the IOFET structure.
Electrochemical fabrication of metal/oxide/conducting polymer junction
BOCCHETTA, PATRIZIA;
2011-01-01
Abstract
The electrochemical fabrication of a hybrid inorganic-organic field effect transistor (IOFET) is described. Ti-Zr mixed oxide (dielectric permittivity ∼45) grown by anodizing has been used as a dielectric, while 3,4-polyethylenedioxythiophene has been employed as a semiconducting polymer. The polymerization of 3,4-ethylenedioxythiophene on the oxide has been realized by a photoelectrochemical process. The metal/oxide/polymer junctions have been investigated by photocurrent spectroscopy and scanning electron microscopy. The output transistor characteristics have been recorded in order to test the performance of the junctions in the IOFET structure.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
