Diamond films grown by microwave plasma enhanced chemical vapor deposition technique exhibit different electrical conductivity. In particular, many factors such as substrate type, more or less hydrogenated surface, aging and doping change the electrical current of the diamond surface. There is an increasing need of diamond film for manifold applications because of its excellent behavior in emerging activities such as high-performing telecommunication systems, high-sensitive detecting pathology sensors within noisy human matrices with or without contrast agent, etc. Moreover, new ideas are still coming out from researchers and scientists to give out benefits to the entire area of research. The major finding is to carried circuit components and wired elements. In this paper we report the I-V characteristics of two polycrystalline diamond (PCD) films grown on intrinsic (i-Si) and p-doped silicon (p-Si) substrates. At 40 V the current of PCD film grown on p-Si is one order of magnitude higher than one on i-Si. The result suggests a possible application of diamond films in circuital elements or in more complex electronic components integrated into different substrates.
Diamond films for electrical and electronic circuitry
Lay-Ekuakille A.
;Velardi L.;
2018-01-01
Abstract
Diamond films grown by microwave plasma enhanced chemical vapor deposition technique exhibit different electrical conductivity. In particular, many factors such as substrate type, more or less hydrogenated surface, aging and doping change the electrical current of the diamond surface. There is an increasing need of diamond film for manifold applications because of its excellent behavior in emerging activities such as high-performing telecommunication systems, high-sensitive detecting pathology sensors within noisy human matrices with or without contrast agent, etc. Moreover, new ideas are still coming out from researchers and scientists to give out benefits to the entire area of research. The major finding is to carried circuit components and wired elements. In this paper we report the I-V characteristics of two polycrystalline diamond (PCD) films grown on intrinsic (i-Si) and p-doped silicon (p-Si) substrates. At 40 V the current of PCD film grown on p-Si is one order of magnitude higher than one on i-Si. The result suggests a possible application of diamond films in circuital elements or in more complex electronic components integrated into different substrates.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
