MICOCCI, Gioacchino
MICOCCI, Gioacchino
DIPARTIMENTO DI BENI CULTURALI
"LB multilayers of highly conjugated porphyrin dimers: differentiation of properties and behaviour between the free base and the metallated derivatives"
2002-01-01 Arnold, D. P.; Genga, Alessandra; Manno, Daniela Erminia; Micocci, Gioacchino; Serra, A.; Tepore, A.; Valli, L.
"Structural and electrical properties of In2O3-SeO2 mixed oxide thin films for gas sensing applications"
2000-01-01 Manno, D.; DI GIULIO, M.; Micocci, Gioacchino; Serra, A.; Tepore, A.
ANALYSIS OF SCLC CURVES BY A NEW DIRECT METHOD.
1976-01-01 Manfredotti, Claudio; DE BLASI, Carmelo; Galassini, Silvio; Micocci, Gioacchino; Ruggiero, Livio; Tepore, Antonio
Application of PCA and HCA to PM10 Data Collected by SEM/EDS in Three Site of Center Italy
2010-01-01 Genga, Alessandra; F., Baglivi; Siciliano, Maria; Siciliano, Tiziana; Tepore, Antonio; Micocci, Gioacchino; C., Tortorella; D., Aiello
Characteristics of molybdenum trioxide nanobelts prepared by thermal evaporation technique
2009-01-01 Siciliano, Tiziana; Tepore, Antonio; Filippo, Emanuela; Micocci, Gioacchino; Tepore, Marco
CO sensing characteristics of reactively sputtered SnO2 thin films prepared under different oxygen partial pressure values
1996-01-01 Micocci, Gioacchino; Serra, Antonio; Siciliano, Pietro; Tepore, Antonio; Ali Adib, Z.
Conductivity and optical absorption in amorphous gallium sulphide thin films
1989-01-01 Micocci, Gioacchino; Rella, Roberto; Tepore, Antonio
Conductivity modulationin metalloporphyrin dimer Langmuir-Blodgett films induced by gas adsorption
1998-01-01 Valli, Ludovico; Tepore, Antonio; Micocci, Gioacchino; Serra, Antonio; Manno, Daniela Erminia; D. P., Arnold
Deep level spectroscopy in p-GaSe single crystals
1990-01-01 Micocci, Gioacchino; Siciliano, Pietro; Tepore, Antonio
Deep level transient spectroscopy in p-doped InSe single crystals
1991-01-01 Micocci, Gioacchino; Tepore, Antonio; Rella, Roberto; Siciliano, Pietro
Deep level transient spectroscopy measurements in InSe single crystals
1989-01-01 Micocci, Gioacchino; Rizzo, Angelo; Siciliano, Pietro; Tepore, Antonio
Deep levels in indium selenide single crystals doped with iodine
1995-01-01 Micocci, Gioacchino; Tepore, Antonio; Rella, Roberto; Siciliano, Pietro
Density of states in evaporated amorphous GaSe films using space-charge-limited current measurements
1988-01-01 Micocci, Gioacchino; Siciliano, Pietro; Tepore, Antonio
Determination of electron traps in tin disulphide crystals by thermally stimulated current measurements
1996-01-01 Micocci, Gioacchino; Tepore, Antonio
Diffusion length in back-wall Schottky-barrier cells from RT spectral response measurements
1980-01-01 DE BLASI, Carmelo; DI GIULIO, Massimo; Galassini, Silvio; Micocci, Gioacchino; Tepore, Antonio; Manfredotti, Claudio
Double injection in GaTe
1978-01-01 DE BLASI, Carmelo; Galassini, Silvio; Manfredotti, Claudio; Micocci, Gioacchino; Tepore, Antonio
Effects of exposure temperature on thermally stimulated currents in InSe single crystals
1985-01-01 Micocci, Gioacchino; Mongelli, Saverio; Rizzo, Angelo; Tepore, Antonio
Electrical characterization of In2Se3 single crystals
1991-01-01 Micocci, Gioacchino; Tepore, Antonio; Rella, Roberto; Siciliano, Pietro
Electrical properties of indium selenide single crystals doped with tin
1992-01-01 Micocci, Gioacchino; Tepore, Antonio; Rella, Roberto; Siciliano, Pietro
Electrical properties of vacuum-deposited polycrystalline InSe thin films
1991-01-01 Micocci, Gioacchino; Tepore, Antonio; Rella, Roberto; Siciliano, Pietro
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
"LB multilayers of highly conjugated porphyrin dimers: differentiation of properties and behaviour between the free base and the metallated derivatives" | 1-gen-2002 | Arnold, D. P.; Genga, Alessandra; Manno, Daniela Erminia; Micocci, Gioacchino; Serra, A.; Tepore, A.; Valli, L. | |
"Structural and electrical properties of In2O3-SeO2 mixed oxide thin films for gas sensing applications" | 1-gen-2000 | Manno, D.; DI GIULIO, M.; Micocci, Gioacchino; Serra, A.; Tepore, A. | |
ANALYSIS OF SCLC CURVES BY A NEW DIRECT METHOD. | 1-gen-1976 | Manfredotti, Claudio; DE BLASI, Carmelo; Galassini, Silvio; Micocci, Gioacchino; Ruggiero, Livio; Tepore, Antonio | |
Application of PCA and HCA to PM10 Data Collected by SEM/EDS in Three Site of Center Italy | 1-gen-2010 | Genga, Alessandra; F., Baglivi; Siciliano, Maria; Siciliano, Tiziana; Tepore, Antonio; Micocci, Gioacchino; C., Tortorella; D., Aiello | |
Characteristics of molybdenum trioxide nanobelts prepared by thermal evaporation technique | 1-gen-2009 | Siciliano, Tiziana; Tepore, Antonio; Filippo, Emanuela; Micocci, Gioacchino; Tepore, Marco | |
CO sensing characteristics of reactively sputtered SnO2 thin films prepared under different oxygen partial pressure values | 1-gen-1996 | Micocci, Gioacchino; Serra, Antonio; Siciliano, Pietro; Tepore, Antonio; Ali Adib, Z. | |
Conductivity and optical absorption in amorphous gallium sulphide thin films | 1-gen-1989 | Micocci, Gioacchino; Rella, Roberto; Tepore, Antonio | |
Conductivity modulationin metalloporphyrin dimer Langmuir-Blodgett films induced by gas adsorption | 1-gen-1998 | Valli, Ludovico; Tepore, Antonio; Micocci, Gioacchino; Serra, Antonio; Manno, Daniela Erminia; D. P., Arnold | |
Deep level spectroscopy in p-GaSe single crystals | 1-gen-1990 | Micocci, Gioacchino; Siciliano, Pietro; Tepore, Antonio | |
Deep level transient spectroscopy in p-doped InSe single crystals | 1-gen-1991 | Micocci, Gioacchino; Tepore, Antonio; Rella, Roberto; Siciliano, Pietro | |
Deep level transient spectroscopy measurements in InSe single crystals | 1-gen-1989 | Micocci, Gioacchino; Rizzo, Angelo; Siciliano, Pietro; Tepore, Antonio | |
Deep levels in indium selenide single crystals doped with iodine | 1-gen-1995 | Micocci, Gioacchino; Tepore, Antonio; Rella, Roberto; Siciliano, Pietro | |
Density of states in evaporated amorphous GaSe films using space-charge-limited current measurements | 1-gen-1988 | Micocci, Gioacchino; Siciliano, Pietro; Tepore, Antonio | |
Determination of electron traps in tin disulphide crystals by thermally stimulated current measurements | 1-gen-1996 | Micocci, Gioacchino; Tepore, Antonio | |
Diffusion length in back-wall Schottky-barrier cells from RT spectral response measurements | 1-gen-1980 | DE BLASI, Carmelo; DI GIULIO, Massimo; Galassini, Silvio; Micocci, Gioacchino; Tepore, Antonio; Manfredotti, Claudio | |
Double injection in GaTe | 1-gen-1978 | DE BLASI, Carmelo; Galassini, Silvio; Manfredotti, Claudio; Micocci, Gioacchino; Tepore, Antonio | |
Effects of exposure temperature on thermally stimulated currents in InSe single crystals | 1-gen-1985 | Micocci, Gioacchino; Mongelli, Saverio; Rizzo, Angelo; Tepore, Antonio | |
Electrical characterization of In2Se3 single crystals | 1-gen-1991 | Micocci, Gioacchino; Tepore, Antonio; Rella, Roberto; Siciliano, Pietro | |
Electrical properties of indium selenide single crystals doped with tin | 1-gen-1992 | Micocci, Gioacchino; Tepore, Antonio; Rella, Roberto; Siciliano, Pietro | |
Electrical properties of vacuum-deposited polycrystalline InSe thin films | 1-gen-1991 | Micocci, Gioacchino; Tepore, Antonio; Rella, Roberto; Siciliano, Pietro |