IRIS
PRETE, Paola
 Distribuzione geografica
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Continente #
EU - Europa 5.901
AS - Asia 4.064
NA - Nord America 3.558
SA - Sud America 557
AF - Africa 62
Continente sconosciuto - Info sul continente non disponibili 4
OC - Oceania 3
Totale 14.149
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Nazione #
US - Stati Uniti d'America 3.424
SG - Singapore 1.901
IT - Italia 1.829
IE - Irlanda 1.556
RU - Federazione Russa 1.127
CN - Cina 777
HK - Hong Kong 596
BR - Brasile 460
SE - Svezia 384
UA - Ucraina 370
VN - Vietnam 338
IN - India 160
FR - Francia 145
FI - Finlandia 125
DE - Germania 117
KR - Corea 90
GB - Regno Unito 80
CA - Canada 63
MX - Messico 57
AR - Argentina 46
JP - Giappone 42
PL - Polonia 41
BD - Bangladesh 38
ZA - Sudafrica 33
ES - Italia 27
BE - Belgio 20
ID - Indonesia 19
NL - Olanda 19
IQ - Iraq 18
PK - Pakistan 18
EC - Ecuador 16
TR - Turchia 15
CZ - Repubblica Ceca 14
AT - Austria 13
CO - Colombia 10
LT - Lituania 10
CL - Cile 9
AE - Emirati Arabi Uniti 7
TN - Tunisia 7
SN - Senegal 6
MA - Marocco 5
MD - Moldavia 5
NP - Nepal 5
VE - Venezuela 5
BH - Bahrain 4
DO - Repubblica Dominicana 4
DZ - Algeria 4
EG - Egitto 4
JO - Giordania 4
PY - Paraguay 4
AU - Australia 3
CH - Svizzera 3
EU - Europa 3
IL - Israele 3
IR - Iran 3
KZ - Kazakistan 3
LU - Lussemburgo 3
MY - Malesia 3
PE - Perù 3
RO - Romania 3
TH - Thailandia 3
BB - Barbados 2
BG - Bulgaria 2
GY - Guiana 2
OM - Oman 2
PA - Panama 2
PH - Filippine 2
PS - Palestinian Territory 2
SA - Arabia Saudita 2
SY - Repubblica araba siriana 2
TT - Trinidad e Tobago 2
UZ - Uzbekistan 2
AL - Albania 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BO - Bolivia 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
DK - Danimarca 1
GE - Georgia 1
GR - Grecia 1
GT - Guatemala 1
HN - Honduras 1
HU - Ungheria 1
JM - Giamaica 1
KE - Kenya 1
LB - Libano 1
MN - Mongolia 1
NG - Nigeria 1
NO - Norvegia 1
SI - Slovenia 1
SV - El Salvador 1
TW - Taiwan 1
UY - Uruguay 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 14.149
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Città #
Lecce 1.644
Dublin 1.553
San Jose 594
Hong Kong 546
Singapore 535
Moscow 290
Ashburn 248
Chandler 238
Beijing 225
Dallas 200
Jacksonville 193
Ho Chi Minh City 132
Los Angeles 105
New York 104
Wayanad 99
Princeton 96
Lauterbourg 84
Seoul 81
Hanoi 71
Des Moines 59
São Paulo 50
Munich 48
West Jordan 47
Central District 44
Tokyo 39
Wilmington 38
Santa Clara 37
Warsaw 35
Montreal 34
Ann Arbor 32
Council Bluffs 32
Orem 30
Rome 28
Kent 27
Ogden 27
Boardman 26
Taranto 26
Brooklyn 22
Chennai 22
Atlanta 21
Stockholm 21
Houston 20
Johannesburg 20
The Dalles 20
Brussels 19
Denver 19
Frankfurt am Main 17
Mexico City 17
Poplar 17
Chicago 16
Columbus 16
Helsinki 16
London 16
Amsterdam 15
Da Nang 15
Lequile 15
Turku 15
Haiphong 14
Manchester 14
Nuremberg 13
Trepuzzi 13
Belo Horizonte 12
Guangzhou 12
Phoenix 12
Boston 11
Jinan 11
Kyiv 11
Rio de Janeiro 11
Biên Hòa 10
Tianjin 10
Toronto 10
Marseille 9
Shenyang 9
Baghdad 8
Dhaka 8
Gwanak-gu 8
Hải Dương 8
Lappeenranta 8
Mumbai 8
Pavia 8
Porto Alegre 8
Prague 8
Querétaro 8
Redwood City 8
Buenos Aires 7
Chengdu 7
Fortaleza 7
Vienna 7
Bari 6
Brasília 6
Charlotte 6
Dakar 6
Falls Church 6
Guayaquil 6
João Pessoa 6
Lahore 6
Nanjing 6
Salvador 6
Shanghai 6
Vancouver 6
Totale 8.426
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Nome #
Au-Catalyst Assisted MOVPE Growth of CdTe Nanowires for Photovoltaic Applications 258
DC-magnetron sputtering of ZnO:Al films on (00.1)Al2O3 substrates from slip-casting sintered ceramic targets 211
A novel approach towards reduced growth temperatures and hydrogen incorporation in the MOVPE of ZnSe, ZnS and ZnSSe for blue LEDs and lasers 204
Au Nanoparticles Prepared by Physical Method on Si and Sapphire Substrates for Biosensor Applications 202
Surface-mediated electrical transport in single GaAs nanowires 202
Assessment of heteroepitaxial ZnSe layers on GaAs by means of grazing incident X-ray topography 193
Luminescence of GaAs/AlGaAs core-shell nanowires grown by MOVPE using tertiarybutylarsine 193
Characterization of ZnTe homo-epitaxial layers by means of synchrotron X-ray topography 192
CdTe nanowires by Au-catalyzed metalorganic vapor phase epitaxy 192
Au-assisted MOVPE self-assembly and properties of GaAs, AlGaAs, and GaAs-AlGaAs core-shell nanowires 190
Hydrogen transport vapor phase epitaxy of CdTe on hybrid substrates for x-ray detector applications 188
Structural characterization of MOVPE-grown GaAs/AlGaAs core-shell nanowires through transmission electron microscopy 188
A density functional theory study of surface and gas phase processes occurring during the MOCVD of ZnS 187
Morphology and microstructure of core-shell GaAs/GaxAl1-xAs nanowires investigated by He-ion microscopy and X-ray reciprocal space mapping 186
3D mapping of nanoscale electric potentials in semiconductor structures with electron-holographic tomography 186
Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals 184
On the MOVPE growth and luminescence properties of GaAs-AlGaAs core-multishell nanowire quantum structures 182
GaAs-AlGaAs core-shell nanowire arrays: correlating MOVPE growth and luminescence properties 182
Deep blue emitting ZnS/ZnSe multiple quantum well lasers grown by MOVPE on (001)GaAs 173
Direct epitaxial CVD synthesis of tungsten disulfide on epitaxial and CVD graphene 173
Microstructural characterization of GaAs-AlxGa1-xAs core-shell nanowires grown by Au-catalyst assisted metalorganic vapor phase epitaxy 172
Crystalline structure of ZnSe and ZnSSe epilayers grown on (100)GaAs by metalorganic vapour-phase epitaxy 172
Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine 171
Built-in elastic strain and localization effects on GaAs luminescence of MOVPE-grown GaAs-AlGaAs core-shell nanowires 166
Mass-transport driven growth dynamics of AlGaAs shells deposited around dense GaAs nanowires by metalorganic vapor phase epitaxy 166
Formation of epitaxial Au nanoislands on (100)Si 163
GaAs nanowires grown by Au-catalyst-assisted MOVPE using tertiarybutylarsine as group-V precursor 163
A new method for the growth of CdTe crystals for RT X-ray photon detectors in the 1-100 keV range 163
Low-temperature metalorganic vapor phase epitaxial growth of ZnS using diethyldisulphide as a sulphur precursor 162
Development of a homoepitaxial technology for fabrication of X-and gamma ray detectors based on CdTe p-i-n diodes 161
Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPE 159
Synthesis of vertically-aligned GaAs nanowires on GaAs/(111)Si heterosubstrates by metalorganic vapour phase epitaxy 158
Direct measurement of band edge discountinuity in individual core-shell nanowires by photocurrent spectroscopy 156
Si implantation of SiO2 films by a new ion implantation technique 155
Effect of VLS and VS mechanisms during shell growth of GaAs/AlGaAs core-shell nanowires investigated by transmission electron microscopy 153
Subsurface imaging of coupled carrier transport in GaAs/AlGaAs core-shell nanowires 151
Carrier transport and recombination in MOVPE-grown CdTe/ZnTe/GaAs and ZnTe/GaAs heterostructures 150
Dimethyldiselenide and diethyldisulphide as novel Se and S precursors for the low-temperature MOVPE growth of ZnSe, ZnS and ZnSSe 149
Impiantazione ionica per la realizzazione di nanocristalli di Si in matrice di SiO2 147
Diethyldisulphide as sulphur precursor for the low temperature metalorganic vapour-phase epitaxy of ZnS: growth, morphology and cathodoluminescence results 147
Microstructural and morphological properties of homoepitaxial (001)ZnTe layers investigated by x-ray diffuse scattering 146
Optical properties of MOVPE-grown ZnS epilayers on (100)GaAs 146
Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers MOVPE-grown on (100)GaAs 144
Grazing incident X-ray topographs of heteroepitaxial ZnSe films on GaAs substrates 140
Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe depositedby metalorganic vapor phase epitaxy. 134
Pulsed plasma ion source to create Si nanocrystals in SiO2 substrates 133
Nanoscale three-dimensional reconstruction of elastic and inelastic mean free path lengths by electron holographic tomography 132
MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe:P substrates 130
Enhanced Optical Absorption of GaAs Near-Band-Edge Transitions in GaAs/AlGaAs Core–Shell Nanowires: Implications for Nanowire Solar Cells 129
Morphology and crystallinity of homoepitaxial (100)ZnTe: interplay between surface ad-atom stoichiometry and planar defects nucleation during MOVPE 124
MOVPE growth and optical characterization of ZnS, ZnSe and ZnS/ZnSe multiple quantum wells 122
Adsorption and decomposition steps on Cu(111) of liquid aromatic hydrocarbon precursors for low-temperature CVD of graphene: A DFT study 120
On hydrogen transport VPE-grown CdTe epilayers for fabrication of 1-100 keV X-ray detectors 120
Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies 120
Observation and impact of a “surface skin effect” on lateral growth of nanocrystals 119
Recent developments in the MOVPE growth of low H content ZnSe-based compounds and heterostructures 118
Tunable hot-electron transfer within a single core-shell nanowire 117
Inner composition, defects and morphology of AlGaAs nanowire grown by Au-catalyzed MOVPE 116
Non-radiative and radiative recombination processes of ZnS epitaxial layers 116
Functional validation of novel Se and S alkyl precursors for the low temperature pyrolytic MOVPE growth of ZnSe, ZnS and ZnSSe 115
Vapor phase epitaxy growth of CdTe epilayers for RT x-ray detectors 115
Recent developments in the MOVPE growth of ZnSe-based compounds and heterostructures 115
Sintesi di nanocristalli di Si in matrice di SiO2 mediante plasma controllato indotto da laser ad eccimeri 113
Low pressure MOVPE growth of ZnS epilayers by using dimethyldisulphide precursor 113
Nanometer-scale tomographic reconstruction of three-dimensional electrostatic potentials in GaAs/AlGaAs core-shell nanowires 112
Impact of electron confinement on the lasing properties of ZnS/ZnSe superlattices 112
GaAs hetero-epitaxial layers grown by MOVPE on exactly-oriented and off-cut (1 1 1)Si: Lattice tilt, mosaicity and defects content 111
Molecular decomposition reactions and early nucleation in CVD growth of graphene on Cu and Si substrates from toluene 110
Why III-V nanowires can challenge high-efficiency photovoltaic solar cells 108
SURFACE REACTIONS AND PRECURSORS STOICHIOMETRY EFFECTS ON THE MOVPE GROWTH OF ZnTe BY Me2Zn AND (i-Pr)2Te" 108
Homoepitaxy of ZnTe on (100) oriented substrates: technology issues and MOVPE growth aspects 106
SURFACE REACTIONS AND PRECURSORS STOICHIOMETRY EFFECTS ON THE MOVPE GROWTH OF ZnTe BY Me2Zn AND (i-Pr)2Te, J.Cryst. Growth, (1995). 106
Nondestructive characterisation of MOVPE-grown CdTe and ZnTe epilayers by picosecond and nanosecond "excite-probe" techniques 106
Structural and electrical properties of CdTe layers grown on ZnTe/GaAs by hydrogen transport VPE 105
MOVPE Growth of Wide Band-Gap II—VI Compounds for Near-UV and Deep-Blue Light Emitting Devices 105
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Synthesis and annealing effects on microstructure and optical properties of wide-bandgap polycrystalline ferro-pseudobrookite FeTi2O5 sol-gel layers 104
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Structural properties of MOVPE-grown ZnMgSe epilayers and ZnSe/ZnMgSe MQWs on (100)GaAs 104
Structural characterization of ZnSe/ZnMgSe MQWs grown on (100)GaAs by low pressure MOVPE 104
Novel precursors for the growth of device-quality ZnSe-based compounds 104
Low temperature MOVPE growth and characterisation of ZnS using diethyldisulphide as sulphur precursor 104
Lattice strain and band offsets determination in ZnSe/ZnS short-period superlattices grown by MOVPE on (100)GaAs 104
Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on (100)GaAs 103
null 102
EXCITON SPECTROSCOPY IN Zn1-xCdxSe/ZnSe QUANTUM WELLS, Phys. Rev. B 51, (1995). 100
Studies of carrier dynamics in epitaxial heterostructures by nonlinear optical and microwave techniques 100
Optical heterodyne detection of magnetic resonance in semiconductor heterostructures 98
MOVPE growth of MgSe and ZnMgSe on (100)GaAs 96
Vibrational Raman scattering from surfaces of III-V semiconductors: Microscopic and macroscopic surface modes 96
EXCITONS AND FREE CARRIER LASING IN II-VI QUANTUM WELLS, Materials Science Forum Vols. 182-184, 341 (1995). 95
MOVPE self-assembly and physical properties of free-standing III-V nanowires 94
Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors 93
On optical properties of GaAs and GaAs/AlGaAs core-shell periodic nanowire arrays 92
Intrinsic defects of ZnS epitaxial layers grown by MOVPE 86
On direct-writing methods for electrically contacting GaAs and Ge nanowire devices 85
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Electron holographic tomography for mapping the three-dimensional distribution of electrostatic potential in III-V semiconductor nanowires 83
Polarization anisotropy of individual core/shell GaAs/AlGaAs nanowires by photocurrent spectroscopy 79
Totale 13.639
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Categoria #
all - tutte 61.507
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 61.507
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021260 0 0 0 0 0 0 0 0 0 129 33 98
2021/2022420 6 6 24 82 75 2 11 32 4 11 24 143
2022/20232.451 116 135 85 69 89 113 28 81 1.659 5 47 24
2023/2024681 40 57 31 59 59 59 16 25 72 151 93 19
2024/20252.346 21 30 30 32 127 344 94 95 874 169 260 270
2025/20265.977 472 758 659 798 699 291 632 277 1.089 302 0 0
Totale 14.304