IRIS
LOVERGINE, Nicola
 Distribuzione geografica
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Continente #
EU - Europa 9.902
NA - Nord America 8.037
AS - Asia 6.275
SA - Sud America 946
Continente sconosciuto - Info sul continente non disponibili 178
AF - Africa 98
OC - Oceania 3
Totale 25.439
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Nazione #
US - Stati Uniti d'America 7.577
IT - Italia 3.346
SG - Singapore 2.859
IE - Irlanda 2.478
RU - Federazione Russa 1.793
CN - Cina 1.229
HK - Hong Kong 881
BR - Brasile 781
SE - Svezia 628
UA - Ucraina 609
VN - Vietnam 541
IN - India 265
FR - Francia 237
CA - Canada 222
FI - Finlandia 189
DE - Germania 183
GB - Regno Unito 173
KR - Corea 142
MX - Messico 86
BD - Bangladesh 72
JP - Giappone 72
AR - Argentina 71
PL - Polonia 60
ZA - Sudafrica 46
ES - Italia 45
CR - Costa Rica 34
IQ - Iraq 33
BE - Belgio 28
NL - Olanda 28
PK - Pakistan 27
ID - Indonesia 26
TR - Turchia 26
CO - Colombia 25
EC - Ecuador 25
PR - Porto Rico 23
AT - Austria 21
CZ - Repubblica Ceca 19
LT - Lituania 17
CW - ???statistics.table.value.countryCode.CW??? 16
IL - Israele 15
TT - Trinidad e Tobago 13
CL - Cile 12
GP - Guadalupe 12
AE - Emirati Arabi Uniti 11
GT - Guatemala 11
SV - El Salvador 11
VE - Venezuela 11
HN - Honduras 10
JM - Giamaica 10
PE - Perù 10
TN - Tunisia 10
IR - Iran 8
MA - Marocco 8
NI - Nicaragua 8
RO - Romania 8
SN - Senegal 8
EG - Egitto 7
EU - Europa 7
JO - Giordania 7
KE - Kenya 7
NP - Nepal 7
PH - Filippine 7
BB - Barbados 6
EE - Estonia 6
BH - Bahrain 5
CH - Svizzera 5
DO - Repubblica Dominicana 5
KZ - Kazakistan 5
MD - Moldavia 5
MY - Malesia 5
PY - Paraguay 5
DZ - Algeria 4
PA - Panama 4
SA - Arabia Saudita 4
SC - Seychelles 4
TH - Thailandia 4
UZ - Uzbekistan 4
AL - Albania 3
AU - Australia 3
BG - Bulgaria 3
HU - Ungheria 3
LU - Lussemburgo 3
PS - Palestinian Territory 3
SY - Repubblica araba siriana 3
AZ - Azerbaigian 2
BA - Bosnia-Erzegovina 2
BO - Bolivia 2
DK - Danimarca 2
GE - Georgia 2
GR - Grecia 2
GY - Guiana 2
KW - Kuwait 2
OM - Oman 2
UY - Uruguay 2
AD - Andorra 1
AG - Antigua e Barbuda 1
BM - Bermuda 1
BN - Brunei Darussalam 1
BS - Bahamas 1
BY - Bielorussia 1
Totale 25.269
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Città #
Lecce 2.594
Dublin 2.475
San Jose 1.045
Hong Kong 805
Singapore 803
Ashburn 761
Council Bluffs 677
Moscow 476
Chandler 376
Beijing 352
Dallas 349
Jacksonville 315
New York 208
Ho Chi Minh City 203
Los Angeles 183
Princeton 164
Santa Clara 152
Wayanad 146
Lauterbourg 143
Seoul 133
Hanoi 122
Milan 114
Des Moines 99
São Paulo 75
Munich 72
Central District 69
Montreal 68
Wilmington 65
Tokyo 62
Orem 58
Rome 58
West Jordan 57
Phoenix 54
Kent 51
Warsaw 49
Brooklyn 47
Ann Arbor 44
Ogden 42
Atlanta 38
North Bergen 38
Chicago 36
Chennai 35
Houston 35
Taranto 35
Boardman 34
Miano 33
Denver 32
Mexico City 32
Naples 32
Poplar 29
Stockholm 29
Haiphong 28
London 28
Brussels 27
San José 27
Toronto 26
Frankfurt am Main 25
The Dalles 25
Boston 24
Johannesburg 24
Manchester 24
Da Nang 23
Helsinki 23
Rio de Janeiro 23
Bengaluru 22
Columbus 22
Kyiv 22
Lequile 22
Amsterdam 21
Seattle 20
Turku 20
Biên Hòa 19
Brasília 19
Nuremberg 19
Bari 16
Belo Horizonte 16
Guangzhou 16
Willemstad 16
Jinan 15
Trepuzzi 15
San Francisco 14
Detroit 13
Dhaka 13
Mumbai 13
Tampa 13
Tianjin 13
Vancouver 13
Baghdad 12
Bogotá 12
Calgary 12
Charlotte 12
Cleveland 12
Querétaro 12
San Juan 12
San Salvador 12
Turin 12
Porto Alegre 11
Bologna 10
Buenos Aires 10
Buffalo 10
Totale 14.872
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Nome #
Au-Catalyst Assisted MOVPE Growth of CdTe Nanowires for Photovoltaic Applications 279
Camera di reazione ad elevate prestazioni per processi di deposizione chimica da fase vapore di semiconduttori 239
Photocatalytic Degradation of Tetracycline by {ZnO}/$\upgamma$-Fe2O3 Paramagnetic Nanocomposite Material 238
DC-magnetron sputtering of ZnO:Al films on (00.1)Al2O3 substrates from slip-casting sintered ceramic targets 235
Luminescence of GaAs/AlGaAs core-shell nanowires grown by MOVPE using tertiarybutylarsine 231
Au-catalysed MOVPE growth of GaAs/AlGaAs core-shell nanowires using TBA 230
CdTe nanowires by Au-catalyzed metalorganic vapor phase epitaxy 228
Au Nanoparticles Prepared by Physical Method on Si and Sapphire Substrates for Biosensor Applications 226
A novel CdTe/CZT epitaxial technology for large area RT 1 -100 keV X-ray photon detectors 224
Assessment of heteroepitaxial ZnSe layers on GaAs by means of grazing incident X-ray topography 218
Surface-mediated electrical transport in single GaAs nanowires 216
SiO2-Coated ZnO Nanoflakes Decorated with Ag Nanoparticles for Photocatalytic Water Oxidation 216
A novel approach towards reduced growth temperatures and hydrogen incorporation in the MOVPE of ZnSe, ZnS and ZnSSe for blue LEDs and lasers 215
Au-assisted MOVPE self-assembly and properties of GaAs, AlGaAs, and GaAs-AlGaAs core-shell nanowires 213
Hydrogen transport vapor phase epitaxy of CdTe on hybrid substrates for x-ray detector applications 212
Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals 211
A MOVPE technology for fabrication of CdTe-based homoepitaxial p-i-n diode structures as nuclear radiation detectors 211
A density functional theory study of surface and gas phase processes occurring during the MOCVD of ZnS 210
Determination of surface lattice strain in ZnTe epilayers on {100}GaAs by ion channeling and reflectance spectroscopy 210
Characterization of ZnTe homo-epitaxial layers by means of synchrotron X-ray topography 206
Au-catalyst assisted MOVPE of GaAs nanowires using tertiarybuthylarsine as V-group precursor 205
Structural characterization of MOVPE-grown GaAs/AlGaAs core-shell nanowires through transmission electron microscopy 204
3D mapping of nanoscale electric potentials in semiconductor structures with electron-holographic tomography 203
Growth of epitaxial CdS films on CdTe substrates by chemical vapour deposition 201
Morphology and microstructure of core-shell GaAs/GaxAl1-xAs nanowires investigated by He-ion microscopy and X-ray reciprocal space mapping 200
On the MOVPE growth and luminescence properties of GaAs-AlGaAs core-multishell nanowire quantum structures 198
GaAs-AlGaAs core-shell nanowire arrays: correlating MOVPE growth and luminescence properties 197
Direct epitaxial CVD synthesis of tungsten disulfide on epitaxial and CVD graphene 196
Au-catalysed growth of ZnO nanopillars by the Vapour-Liquid-Solid mechanism 193
Crystalline structure of ZnSe and ZnSSe epilayers grown on (100)GaAs by metalorganic vapour-phase epitaxy 192
Development of CdTe/CZT Epitaxial Technology for Fabrication of Large Area RT 1-100 keV X-ray Photon Detectors 190
Characterisation of Photocathodes Based on Pb Thin Film Deposited by UV Pulsed Laser Ablation 189
Microstructural characterization of GaAs-AlxGa1-xAs core-shell nanowires grown by Au-catalyst assisted metalorganic vapor phase epitaxy 188
Built-in elastic strain and localization effects on GaAs luminescence of MOVPE-grown GaAs-AlGaAs core-shell nanowires 188
Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine 186
Deep blue emitting ZnS/ZnSe multiple quantum well lasers grown by MOVPE on (001)GaAs 185
Development of a homoepitaxial technology for fabrication of X-and gamma ray detectors based on CdTe p-i-n diodes 184
A new method for the growth of CdTe crystals for RT X-ray photon detectors in the 1-100 keV range 184
Mass-transport driven growth dynamics of AlGaAs shells deposited around dense GaAs nanowires by metalorganic vapor phase epitaxy 183
Au-catalysed growth of GaAs and AlGaAs nanowires by liquid source metalorganic vapour phase epitaxy 182
Low-temperature metalorganic vapor phase epitaxial growth of ZnS using diethyldisulphide as a sulphur precursor 181
Formation of epitaxial Au nanoislands on (100)Si 180
Si implantation of SiO2 films by a new ion implantation technique 180
Visible light promoted porphyrin-based metal-organic adduct 180
Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPE 177
GaAs nanowires grown by Au-catalyst-assisted MOVPE using tertiarybutylarsine as group-V precursor 176
Synthesis of vertically-aligned GaAs nanowires on GaAs/(111)Si heterosubstrates by metalorganic vapour phase epitaxy 176
On the Luminescence of VLS-grown GaAs-AlGaAs Core-Shell Nanowires and its Dependence on MOVPE Growth Conditions 173
Structural characterization of CdS epilayers by channeling Rutherford backscattering spectrometry 173
Ion channelling Rutherford backscattering spectrometry structural characterization of CdS/CdTe heterostructures 173
Effect of VLS and VS mechanisms during shell growth of GaAs/AlGaAs core-shell nanowires investigated by transmission electron microscopy 173
MOVPE growth and characterisation of CdTe layers on detector-grade(111)B-CdTe crystals 172
Carrier transport and recombination in MOVPE-grown CdTe/ZnTe/GaAs and ZnTe/GaAs heterostructures 172
MOVPE growth optimisation of CdTe epitaxial layersfor p-i-n diode X-ray detector fabrication 171
Direct measurement of band edge discountinuity in individual core-shell nanowires by photocurrent spectroscopy 170
Lattice strain relaxation of ZnS layers grown by vapour-phase epitaxy on (100)GaAs 169
Inhomogeneous strain relaxation and defect distribution of ZnTe layers deposited on (100)GaAs by metalorganic vapor phase epitaxy 169
Microstructural and morphological properties of homoepitaxial (001)ZnTe layers investigated by x-ray diffuse scattering 167
Impiantazione ionica per la realizzazione di nanocristalli di Si in matrice di SiO2 166
Subsurface imaging of coupled carrier transport in GaAs/AlGaAs core-shell nanowires 166
Dimethyldiselenide and diethyldisulphide as novel Se and S precursors for the low-temperature MOVPE growth of ZnSe, ZnS and ZnSSe 164
Diethyldisulphide as sulphur precursor for the low temperature metalorganic vapour-phase epitaxy of ZnS: growth, morphology and cathodoluminescence results 163
Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxy 162
Optical properties of MOVPE-grown ZnS epilayers on (100)GaAs 159
Hydrogen transport vapour growth and properties of thick CdTe epilayers for RT X-ray detector applications 158
Nano-scale spectroscopic imaging of GaAs-AlGaAs quantum well tube nanowires: correlating luminescence with nanowire size and inner multi-shell structure 157
Grazing incident X-ray topographs of heteroepitaxial ZnSe films on GaAs substrates 156
Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers MOVPE-grown on (100)GaAs 156
Lattice strain determination in MOVPE grown ZnTe epilayers on GaAs by RBS-channeling and reflectance spectroscopy 156
Pulsed plasma ion source to create Si nanocrystals in SiO2 substrates 153
Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe depositedby metalorganic vapor phase epitaxy. 151
MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe:P substrates 149
Shape, size evolution and nucleation mechanisms of GaAs nanoislands grown on (111)Si by low temperature metalorganic vapor phase epitaxy 149
On absorption properties of GaAs/AlGaAs nanowire arrays 147
Enhanced Optical Absorption of GaAs Near-Band-Edge Transitions in GaAs/AlGaAs Core–Shell Nanowires: Implications for Nanowire Solar Cells 146
Nanoscale three-dimensional reconstruction of elastic and inelastic mean free path lengths by electron holographic tomography 146
Adsorption and decomposition steps on Cu(111) of liquid aromatic hydrocarbon precursors for low-temperature CVD of graphene: A DFT study 145
Optical investigation of non-equilibrium carrier dynamics in differently doped VGF-grown ZnTe single crystals 144
Surface structural and morphological characterization of ZnTe epilayers grown on {100}GaAs by MOVPE 144
Pyrolytic MOVPE of CdTe:I on semi-insulating (111)B-CdTe crystals for fabrication of nuclear radiation detectors 142
Recent developments in the MOVPE growth of low H content ZnSe-based compounds and heterostructures 142
Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies 141
Three-dimensional composition and electric potential mapping of III-V core-multishell nanowires by correlative STEM and holographic tomography 141
Synthesis and annealing effects on microstructure and optical properties of wide-bandgap polycrystalline ferro-pseudobrookite FeTi2O5 sol-gel layers 140
Morphology and crystallinity of homoepitaxial (100)ZnTe: interplay between surface ad-atom stoichiometry and planar defects nucleation during MOVPE 139
Electrodeposition of stoichiometric polycrystalline ZnTe on n+-GaAs and Ni–P 139
On hydrogen transport VPE-grown CdTe epilayers for fabrication of 1-100 keV X-ray detectors 138
MOVPE growth and optical characterization of ZnS, ZnSe and ZnS/ZnSe multiple quantum wells 138
Lattice strain and band offsets determination in ZnSe/ZnS short-period superlattices grown by MOVPE on (100)GaAs 138
GaAs hetero-epitaxial layers grown by MOVPE on exactly-oriented and off-cut (1 1 1)Si: Lattice tilt, mosaicity and defects content 137
Principles of VPE and MOVPE and applications 136
Dispositivi ad alta mobilita' elettronica ad eterostruttura (HEMT, High Electron Mobility Transistors) a base di Nitruro di Gallio (GaN) 135
Observation and impact of a “surface skin effect” on lateral growth of nanocrystals 135
Vapor phase epitaxy growth of CdTe epilayers for RT x-ray detectors 134
Lattice strain analysis of VPE-Grown ZnS epitaxial layers on (001)GaAs by RBS-channeling and high resolution XRD measurements 134
Tunable hot-electron transfer within a single core-shell nanowire 133
Non-radiative and radiative recombination processes of ZnS epitaxial layers 133
Why III-V nanowires can challenge high-efficiency photovoltaic solar cells 132
Molecular decomposition reactions and early nucleation in CVD growth of graphene on Cu and Si substrates from toluene 131
Recent developments in the MOVPE growth of ZnSe-based compounds and heterostructures 130
Totale 17.553
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Categoria #
all - tutte 119.044
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 119.044
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022520 0 0 0 0 125 2 20 51 9 19 45 249
2022/20233.890 204 231 141 108 141 165 54 110 2.618 7 64 47
2023/20241.074 69 74 48 78 101 103 24 31 120 210 181 35
2024/20253.664 35 37 42 36 218 510 161 163 1.381 223 415 443
2025/20269.481 775 1.171 1.028 1.249 987 419 972 438 1.549 565 252 76
2026/20272.754 205 536 451 1.458 104 0 0 0 0 0 0 0
Totale 25.439