IRIS
MANCINI, Anna Maria
 Distribuzione geografica
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Continente #
EU - Europa 4.149
NA - Nord America 1.310
AS - Asia 413
Continente sconosciuto - Info sul continente non disponibili 6
AF - Africa 2
OC - Oceania 1
SA - Sud America 1
Totale 5.882
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Nazione #
IT - Italia 1.691
IE - Irlanda 1.539
US - Stati Uniti d'America 1.307
SE - Svezia 378
UA - Ucraina 342
SG - Singapore 125
IN - India 108
FI - Finlandia 103
CN - Cina 76
HK - Hong Kong 69
BE - Belgio 37
FR - Francia 17
JP - Giappone 16
GB - Regno Unito 14
DE - Germania 9
RU - Federazione Russa 9
TR - Turchia 9
EU - Europa 6
CZ - Repubblica Ceca 5
IR - Iran 2
KR - Corea 2
MX - Messico 2
SN - Senegal 2
AT - Austria 1
AU - Australia 1
BG - Bulgaria 1
CA - Canada 1
CL - Cile 1
IL - Israele 1
KZ - Kazakistan 1
LB - Libano 1
LI - Liechtenstein 1
NL - Olanda 1
PH - Filippine 1
RO - Romania 1
UZ - Uzbekistan 1
VN - Vietnam 1
Totale 5.882
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Città #
Lecce 1.645
Dublin 1.539
Chandler 247
Jacksonville 202
Wayanad 106
Princeton 101
Singapore 69
Des Moines 61
Central District 51
New York 40
Wilmington 40
Ann Arbor 36
Brussels 36
Kent 31
Ogden 31
Boardman 25
West Jordan 23
Hong Kong 18
Tokyo 15
Jinan 10
Kocaeli 9
Kyiv 9
Shenyang 9
Pavia 6
San Mateo 6
Ashburn 5
Munich 5
Beijing 4
Edinburgh 4
Los Angeles 4
Nanjing 4
Saint Petersburg 4
Trepuzzi 4
Villafrati 4
Haikou 3
Hebei 3
Lequile 3
Nanchang 3
Norwalk 3
Tianjin 3
Ardabil 2
Auburn Hills 2
Augusta 2
Changsha 2
Cormeilles-en-Parisis 2
Dakar 2
Guangzhou 2
Helsinki 2
Jiaxing 2
Leawood 2
London 2
Ningbo 2
Nový Jičín 2
Parma 2
San Martino in Rio 2
Terralba 2
Anderlecht 1
Bangalore 1
Boydton 1
Bremen 1
Brno 1
Dallas 1
Hangzhou 1
Hanoi 1
Hanover 1
Lanzhou 1
Liverpool 1
Mexico 1
Monmouth Junction 1
Monterrey 1
Mountain View 1
Naga 1
New Delhi 1
Oral 1
Palagiano 1
Paris 1
Pescara 1
Pontedera 1
Prague 1
Puxian 1
Santiago 1
Seoul 1
Sofia 1
Taizhou 1
Taranto 1
Tashkent 1
Tel Aviv 1
Timisoara 1
Toronto 1
Trieste 1
Vaduz 1
Vienna 1
Woodbridge 1
Yicheng 1
Zhengzhou 1
Totale 4.492
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Nome #
Determination of surface lattice strain in ZnTe epilayers on {100}GaAs by ion channeling and reflectance spectroscopy 97
Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine 92
Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals 80
Au-catalysed growth of GaAs and AlGaAs nanowires by liquid source metalorganic vapour phase epitaxy 78
Hydrogen Transport Vapor Phase Epitaxy of CdTe on Hybrid Substrates for X-Ray Detector Applications. 76
Au-catalyst assisted MOVPE of GaAs nanowires using tertiarybuthylarsine as V-group precursor 76
Electric Field Properties of CdTe Nuclear Detectors 75
Development of CdTe/CZT Epitaxial Technology for Fabrication of Large Area RT 1-100 keV X-ray Photon Detectors 75
A MOVPE technology for fabrication of CdTe-based homoepitaxial p-i-n diode structures as nuclear radiation detectors 75
Au-catalysed MOVPE growth of GaAs/AlGaAs core-shell nanowires using TBA 75
Au-catalysed growth of ZnO nanopillars by the Vapour-Liquid-Solid mechanism 74
Dimethyldiselenide and diethyldisulphide as novel Se and S precursors for the low temperature MOVPE of ZnSe, ZnS and ZnSSe 73
Growth of epitaxial CdS films on CdTe substrates by chemical vapour deposition 72
A novel approach towards reduced growth temperatures and hydrogen incorporation in the MOVPE of ZnSe, ZnS and ZnSSe for blue LEDs and lasers 71
Optical properties of MOVPE-grown ZnS epilayers on (100)GaAs 71
GaAs nanowires grown by Au-catalyst-assisted MOVPE using tertiarybutylarsine as group-V precursor 69
A novel CdTe/CZT epitaxial technology for large area RT 1 -100 keV X-ray photon detectors 68
MOVPE growth and characterisation of CdTe layers on detector-grade(111)B-CdTe crystals 68
A density functional theory study of surface and gas phase processes occurring during the MOCVD of ZnS 67
Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers MOVPE-grown on (100)GaAs 67
Deep blue emitting ZnS/ZnSe multiple quantum well lasers grown by MOVPE on (001)GaAs 67
Development of a homoepitaxial technology for fabrication of X-and gamma ray detectors based on CdTe p-i-n diodes 66
Crystalline structure of ZnSe and ZnSSe epilayers grown on (100)GaAs by metalorganic vapour-phase epitaxy 66
Hydrogen transport vapor phase epitaxy of CdTe on hybrid substrates for x-ray detector applications 66
Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPE 66
Lattice strain determination in MOVPE grown ZnTe epilayers on GaAs by RBS-channeling and reflectance spectroscopy 66
A new method for the growth of CdTe crystals for RT X-ray photon detectors in the 1-100 keV range 66
MOVPE growth and characterization of ZnTe epilayers on (001)ZnTe:P substrates 65
A new method for the growth of CdTe crystals for RT X-ray photon detectors in the 1-100 keV range. 65
PRIN - Tecnologie di crescita e ottimizzazione spettroscopica di rivelatori di raggi X e Gamma basati su CdTe/CdZnTe. 65
Photocapacitance and photoconductivity of CdTe/CdS heterojunctions obtained by closed-tube chemical transport 65
Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe depositedby metalorganic vapor phase epitaxy. 64
Morphology and crystallinity of homoepitaxial (100)ZnTe: interplay between surface ad-atom stoichiometry and planar defects nucleation during MOVPE 64
Electric field distribution and charge transport properties in diode-like CdTe X-ray detectors 64
Low-temperature metalorganic vapor phase epitaxial growth of ZnS using diethyldisulphide as a sulphur precursor 64
Ion channelling Rutherford backscattering spectrometry structural characterization of CdS/CdTe heterostructures 64
Preparation and characterization of In2Se3 crystals 64
MOVPE growth of MgSe and ZnMgSe on (001)GaAs 63
Development of CdTe and CdZnTe semiconductor radiation detectors for astrophysical and medical applications 63
MOVPE growth optimisation of CdTe epitaxial layersfor p-i-n diode X-ray detector fabrication 63
A density functional theory study of surface and gas phase processes occurring during the MOCVD of ZnS 63
Crystalline structure of ZnSSe epilayers grown on (100)GaAs by metaorganic vapour-phase epitaxy 62
On hydrogen transport VPE_grown CdTe epilayers for fabrication of 1-100 keV X-ray detectors 62
Lattice strain relaxation of ZnS layers grown by vapour-phase epitaxy on (100)GaAs 62
Structural characterization of CdS epilayers by channeling Rutherford backscattering spectrometry 62
Structural and electrical properties of CdTe layers grown on ZnTe/GaAs by hydrogen transport VPE 61
Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on (100)GaAs 61
A new method for the growth of CdTe crystals for RT photon detector in the 1-100 KeV range 60
Diethyldisulphide as sulphur precursor for the low temperature metalorganic vapour-phase epitaxy of ZnS: growth, morphology and cathodoluminescence results 60
Lattice strain and band offset determination in ZnSe/ZnS short -period superlattices grown by MOVPE on (001)GaAs 59
Hydrogen transport vapour growth and properties of thick CdTe epilayers for RT X-ray detector applications 59
Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxy 59
Pyrolytic MOVPE of CdTe:I on semi-insulating (111)B-CdTe crystals for fabrication of nuclear radiation detectors 58
Dimethyldiselenide and diethyldisulphide as novel Se and S precursors for the low-temperature MOVPE growth of ZnSe, ZnS and ZnSSe 58
Functional validation of novel Se and S alkyl precursors for the low temperature pyrolytic MOVPE 57
Intrinsic defects of ZnS epitaxial layers grown by MOVPE 57
Study on Instability Phenomena in CdTe Diode-like Detectors 57
Lattice strain and band offsets determination in ZnSe/ZnS short-period superlattices grown by MOVPE on (100)GaAs 56
MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe:P substrates 55
Inhomogeneous strain relaxation and defect distribution of ZnTe layers deposited on (100)GaAs by metalorganic vapor phase epitaxy 55
Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies 55
Vapor phase epitaxy growth of CdTe epilayers for RT x-ray detectors 55
MOVPE growth and optical characterization of ZnS, ZnSe and ZnS/ZnSe multiple quantum wells 55
Structural and optical properties of MOVPE-grown ZnMgSe epilayers and ZnSe/ZnMgSE multiple quantum wells 54
Progetto Nazionale ASI - Rivelatori ad alto Z: Studio e realizzazione di un prototipo di rivelatore X epitassiale per applicazioni astrofisiche. 54
Low pressure MOVPE growth of ZnS epilayers by using dimethyldisulphide precursor 54
Non destructive characterization of MOVPE-grown CdTe and ZnTe epilayers by nanosecond and picosecond 53
Structural and electrical properties of CdTe layers grown on ZnTe/GaAs by hydrogen transport VPE 52
Studies of carrier dynamics in epitaxial heterostructures by non linear optical and microwaves techniques 51
Surface structural and morphological characterization of ZnTe epilayers grown on {100}GaAs by MOVPE 51
Lattice strain analysis of VPE-Grown ZnS epitaxial layers on (001)GaAs by RBS-channeling and high resolution XRD measurements 51
PRIN - Sviluppo di rivelatori a CdTe per raggi X e gamma di nuova generazione: rivelatori a contatti epitassiali. 50
PRIN - Sviluppo di rivelatori a CdTe per raggi X e gamma di nuova generazione: rivelatori a contatti epitassiali. II anno 50
Functional validation of novel Se and S alkyl precursors for the low temperature pyrolytic MOVPE growth of ZnSe, ZnS and ZnSSe 50
Study on instability phenomena in CdTe diode-like detectors 49
On hydrogen transport VPE-grown CdTe epilayers for fabrication of 1-100 keV X-ray detectors 49
Low temperature MOVPE growth and characterisation of ZnS using diethyldisulphide as sulphur precursor 49
Nonradiative and radiative recombination processes of ZnS epitaxial layers 48
Vapor phase epitaxy growth of CdTe epilayers for RT x-ray detectors 48
Non-radiative and radiative recombination processes of ZnS epitaxial layers 48
Progetto INFN - Spectroscopic Improvements by Novel Electrode Configurations (SINEC) 47
Study on Instability Phenomena in CdTe Diode-like Detectors 46
Structural characterization of ZnSe/ZnMgSe MQWs grown on (100)GaAs by low pressure MOVPE 46
Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on (100)GaAs 46
Metalorganic vapour phase epitaxy growth of ZnS layers by (t-Bu)SH and Me2Zn:Et3N precursors 46
Nonequilibrium carrier dynamics in MOVPE-grown homoepitaxial ZnTe layers and substrate material 45
MOVPE Growth of Wide Band-Gap II—VI Compounds for Near-UV and Deep-Blue Light Emitting Devices 45
Structural properties of MOVPE-grown ZnMgSe epilayers and ZnSe/ZnMgSe MQWs on (100)GaAs 44
Investigation of ZnTe homoepitaxial layers grown by metalorganic vapour phase epitaxy on VGF-grown (100)ZnTe:P wafers 43
Photoluminescence of CVD grown CdS epilayers on CdTe substrates 43
Homoepitaxy of ZnTe on (100) oriented substrates: technology issues and MOVPE growth aspects 42
Self-organized growth of ZnTe nanoscale islands on (001)GaAs 42
Nondestructive characterisation of MOVPE-grown CdTe and ZnTe epilayers by picosecond and nanosecond "excite-probe" techniques 42
Studies of carrier dynamics in epitaxial heterostructures by nonlinear optical and microwave techniques 41
Effects of ad-atom stoichiometry and stacking faults nucleation on the structure and morphology of MOVPE-grown (100)ZnTe homoepitaxial layers 40
PRIN - Tecnologie di crescita e ottimizzazione spettroscopica di rivelatori di raggi X e Gamma basati su CdTe/CdZnTe. II anno 40
Intrinsic defects of ZnS epitaxial layers grown by MOVPE 40
MOVPE growth of MgSe and ZnMgSe on (100)GaAs 38
Investigation of growth mode behavior and surface morphology evolution of metalorganic vapor phase epitaxy grown ZnTe layers on (001)GaAs 38
Stranski–Krastanow MOVPE growth of nanoscale ZnTe islands on (001)GaAs 38
Totale 5.856
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Categoria #
all - tutte 33.193
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 33.193
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020845 0 0 0 104 50 271 87 170 29 26 106 2
2020/2021830 98 3 103 106 48 103 3 104 8 116 36 102
2021/2022409 4 10 25 59 74 1 6 41 6 5 34 144
2022/20232.415 117 133 82 54 119 118 37 67 1.615 5 46 22
2023/2024579 36 30 21 47 45 46 3 9 64 136 125 17
2024/202571 30 9 29 3 0 0 0 0 0 0 0 0
Totale 5.893