IRIS
MANCINI, Anna Maria
 Distribuzione geografica
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Continente #
EU - Europa 5.389
AS - Asia 3.493
NA - Nord America 2.827
SA - Sud America 637
AF - Africa 71
Continente sconosciuto - Info sul continente non disponibili 6
OC - Oceania 2
Totale 12.425
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Nazione #
US - Stati Uniti d'America 2.705
IT - Italia 1.788
SG - Singapore 1.721
IE - Irlanda 1.542
RU - Federazione Russa 703
CN - Cina 618
BR - Brasile 535
HK - Hong Kong 508
SE - Svezia 400
UA - Ucraina 373
VN - Vietnam 203
IN - India 168
DE - Germania 137
FI - Finlandia 128
KR - Corea 103
GB - Regno Unito 87
CA - Canada 59
FR - Francia 51
MX - Messico 49
PL - Polonia 46
AR - Argentina 37
BE - Belgio 37
ZA - Sudafrica 37
JP - Giappone 35
BD - Bangladesh 27
ES - Italia 26
TR - Turchia 21
ID - Indonesia 19
AT - Austria 18
CO - Colombia 18
EC - Ecuador 18
NL - Olanda 15
LT - Lituania 14
IQ - Iraq 12
PK - Pakistan 8
PY - Paraguay 8
VE - Venezuela 8
AE - Emirati Arabi Uniti 7
CZ - Repubblica Ceca 7
SA - Arabia Saudita 7
TN - Tunisia 7
EG - Egitto 6
EU - Europa 6
KE - Kenya 6
CL - Cile 5
IL - Israele 5
MA - Marocco 5
DZ - Algeria 4
KZ - Kazakistan 4
SN - Senegal 4
MK - Macedonia 3
NP - Nepal 3
OM - Oman 3
PE - Perù 3
UY - Uruguay 3
UZ - Uzbekistan 3
AL - Albania 2
AU - Australia 2
BG - Bulgaria 2
DO - Repubblica Dominicana 2
GE - Georgia 2
HN - Honduras 2
IR - Iran 2
JM - Giamaica 2
KW - Kuwait 2
LB - Libano 2
PA - Panama 2
TT - Trinidad e Tobago 2
AD - Andorra 1
BB - Barbados 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BO - Bolivia 1
BY - Bielorussia 1
CH - Svizzera 1
DK - Danimarca 1
ET - Etiopia 1
GD - Grenada 1
GR - Grecia 1
GY - Guiana 1
JO - Giordania 1
KH - Cambogia 1
LI - Liechtenstein 1
MD - Moldavia 1
MY - Malesia 1
NI - Nicaragua 1
NO - Norvegia 1
PH - Filippine 1
PS - Palestinian Territory 1
PT - Portogallo 1
RO - Romania 1
SO - Somalia 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
TL - Timor Orientale 1
Totale 12.425
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Città #
Lecce 1.652
Dublin 1.540
Hong Kong 453
Singapore 432
Dallas 266
Chandler 247
Beijing 224
Moscow 204
Jacksonville 203
Ashburn 192
Los Angeles 111
Wayanad 106
Seoul 102
New York 101
Princeton 101
Munich 62
Des Moines 61
Ho Chi Minh City 58
Central District 51
Hanoi 50
São Paulo 49
Warsaw 41
Wilmington 40
Ann Arbor 36
Brussels 36
Tokyo 34
Kent 31
Ogden 31
Brooklyn 27
Boardman 25
Montreal 25
West Jordan 23
Chennai 22
Denver 22
Stockholm 22
Johannesburg 21
Mexico City 21
Orem 20
Santa Clara 20
Frankfurt am Main 19
Houston 19
Rome 19
Boston 18
London 18
Poplar 18
Chicago 17
Phoenix 17
Nuremberg 16
Haiphong 15
Atlanta 14
Bengaluru 14
Rio de Janeiro 14
Turku 13
Toronto 12
Biên Hòa 11
Querétaro 11
The Dalles 11
Curitiba 10
Jinan 10
Manchester 10
Naples 10
Shenyang 10
Belo Horizonte 9
Da Nang 9
Guangzhou 9
Kocaeli 9
Kyiv 9
Vienna 9
Ankara 8
Bologna 8
Helsinki 8
Seattle 8
Vancouver 8
Brasília 7
Buenos Aires 7
Hải Dương 7
Porto Alegre 7
Cape Town 6
Changsha 6
Contagem 6
Falkenstein 6
Lappeenranta 6
Milan 6
Pavia 6
Salvador 6
San Mateo 6
Amsterdam 5
Baghdad 5
Bogotá 5
Guayaquil 5
Hoffman 5
Manaus 5
Nairobi 5
Pittsburgh 5
San Pietro Vernotico 5
Sorocaba 5
São Gonçalo 5
Taranto 5
Arapiraca 4
Augusta 4
Totale 7.332
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Nome #
A novel approach towards reduced growth temperatures and hydrogen incorporation in the MOVPE of ZnSe, ZnS and ZnSSe for blue LEDs and lasers 172
Determination of surface lattice strain in ZnTe epilayers on {100}GaAs by ion channeling and reflectance spectroscopy 163
Au-catalysed MOVPE growth of GaAs/AlGaAs core-shell nanowires using TBA 162
A MOVPE technology for fabrication of CdTe-based homoepitaxial p-i-n diode structures as nuclear radiation detectors 160
Au-catalyst assisted MOVPE of GaAs nanowires using tertiarybuthylarsine as V-group precursor 160
Hydrogen transport vapor phase epitaxy of CdTe on hybrid substrates for x-ray detector applications 160
Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine 158
A novel CdTe/CZT epitaxial technology for large area RT 1 -100 keV X-ray photon detectors 158
Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals 154
Au-catalysed growth of ZnO nanopillars by the Vapour-Liquid-Solid mechanism 152
Growth of epitaxial CdS films on CdTe substrates by chemical vapour deposition 152
A density functional theory study of surface and gas phase processes occurring during the MOCVD of ZnS 151
Au-catalysed growth of GaAs and AlGaAs nanowires by liquid source metalorganic vapour phase epitaxy 150
Deep blue emitting ZnS/ZnSe multiple quantum well lasers grown by MOVPE on (001)GaAs 148
Crystalline structure of ZnSe and ZnSSe epilayers grown on (100)GaAs by metalorganic vapour-phase epitaxy 146
GaAs nanowires grown by Au-catalyst-assisted MOVPE using tertiarybutylarsine as group-V precursor 143
Effects of Resveratrol, Curcumin and Quercetin Supplementation on Bone Metabolism—A Systematic Review 140
A density functional theory study of surface and gas phase processes occurring during the MOCVD of ZnS 138
Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPE 138
A new method for the growth of CdTe crystals for RT X-ray photon detectors in the 1-100 keV range 138
Low-temperature metalorganic vapor phase epitaxial growth of ZnS using diethyldisulphide as a sulphur precursor 137
Development of a homoepitaxial technology for fabrication of X-and gamma ray detectors based on CdTe p-i-n diodes 136
Development of CdTe/CZT Epitaxial Technology for Fabrication of Large Area RT 1-100 keV X-ray Photon Detectors 135
A new method for the growth of CdTe crystals for RT X-ray photon detectors in the 1-100 keV range. 133
MOVPE growth and characterisation of CdTe layers on detector-grade(111)B-CdTe crystals 132
Ion channelling Rutherford backscattering spectrometry structural characterization of CdS/CdTe heterostructures 131
Diethyldisulphide as sulphur precursor for the low temperature metalorganic vapour-phase epitaxy of ZnS: growth, morphology and cathodoluminescence results 130
Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers MOVPE-grown on (100)GaAs 129
MOVPE growth optimisation of CdTe epitaxial layersfor p-i-n diode X-ray detector fabrication 129
Dimethyldiselenide and diethyldisulphide as novel Se and S precursors for the low-temperature MOVPE growth of ZnSe, ZnS and ZnSSe 128
Lattice strain relaxation of ZnS layers grown by vapour-phase epitaxy on (100)GaAs 128
Inhomogeneous strain relaxation and defect distribution of ZnTe layers deposited on (100)GaAs by metalorganic vapor phase epitaxy 126
Preparation and characterization of In2Se3 crystals 126
Structural characterization of CdS epilayers by channeling Rutherford backscattering spectrometry 125
Optical properties of MOVPE-grown ZnS epilayers on (100)GaAs 123
Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxy 122
A new method for the growth of CdTe crystals for RT photon detector in the 1-100 KeV range 121
Photocapacitance and photoconductivity of CdTe/CdS heterojunctions obtained by closed-tube chemical transport 120
Electric Field Properties of CdTe Nuclear Detectors 114
PRIN - Tecnologie di crescita e ottimizzazione spettroscopica di rivelatori di raggi X e Gamma basati su CdTe/CdZnTe. 114
Hydrogen transport vapour growth and properties of thick CdTe epilayers for RT X-ray detector applications 112
Morphology and crystallinity of homoepitaxial (100)ZnTe: interplay between surface ad-atom stoichiometry and planar defects nucleation during MOVPE 110
Development of CdTe and CdZnTe semiconductor radiation detectors for astrophysical and medical applications 110
Oralbiotica/Oralbiotics: The Impact of Oral Microbiota on Dental Health and Demineralization: A Systematic Review of the Literature 108
Hydrogen Transport Vapor Phase Epitaxy of CdTe on Hybrid Substrates for X-Ray Detector Applications. 108
Lattice strain determination in MOVPE grown ZnTe epilayers on GaAs by RBS-channeling and reflectance spectroscopy 108
Dimethyldiselenide and diethyldisulphide as novel Se and S precursors for the low temperature MOVPE of ZnSe, ZnS and ZnSSe 107
Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe depositedby metalorganic vapor phase epitaxy. 106
Pyrolytic MOVPE of CdTe:I on semi-insulating (111)B-CdTe crystals for fabrication of nuclear radiation detectors 104
MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe:P substrates 104
Surface structural and morphological characterization of ZnTe epilayers grown on {100}GaAs by MOVPE 104
Progetto Nazionale ASI - Rivelatori ad alto Z: Studio e realizzazione di un prototipo di rivelatore X epitassiale per applicazioni astrofisiche. 103
PRIN - Sviluppo di rivelatori a CdTe per raggi X e gamma di nuova generazione: rivelatori a contatti epitassiali. 100
Autologous Tooth Graft: Innovative Biomaterial for Bone Regeneration. Tooth Transformer® and the Role of Microbiota in Regenerative Dentistry. A Systematic Review 99
Crystalline structure of ZnSSe epilayers grown on (100)GaAs by metaorganic vapour-phase epitaxy 99
Dentin, Dentin Graft, and Bone Graft: Microscopic and Spectroscopic Analysis 98
Amantinomatous craniopharyngiomas and odontogenic epithelial differentiation 98
MOVPE growth of MgSe and ZnMgSe on (001)GaAs 98
Chewing and cognitive performance: what we know 96
Structural and electrical properties of CdTe layers grown on ZnTe/GaAs by hydrogen transport VPE 96
Electric field distribution and charge transport properties in diode-like CdTe X-ray detectors 96
MOVPE growth and characterization of ZnTe epilayers on (001)ZnTe:P substrates 96
On hydrogen transport VPE_grown CdTe epilayers for fabrication of 1-100 keV X-ray detectors 96
Study on Instability Phenomena in CdTe Diode-like Detectors 96
On hydrogen transport VPE-grown CdTe epilayers for fabrication of 1-100 keV X-ray detectors 96
Metalorganic vapour phase epitaxy growth of ZnS layers by (t-Bu)SH and Me2Zn:Et3N precursors 96
Orthodontic Surgical Treatment of Impacted Mandibular Canines: Systematic Review and Case Report 95
Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies 95
Non-radiative and radiative recombination processes of ZnS epitaxial layers 95
Vapor phase epitaxy growth of CdTe epilayers for RT x-ray detectors 95
MOVPE growth and optical characterization of ZnS, ZnSe and ZnS/ZnSe multiple quantum wells 95
Lattice strain analysis of VPE-Grown ZnS epitaxial layers on (001)GaAs by RBS-channeling and high resolution XRD measurements 95
Lattice strain and band offset determination in ZnSe/ZnS short -period superlattices grown by MOVPE on (001)GaAs 94
Functional validation of novel Se and S alkyl precursors for the low temperature pyrolytic MOVPE growth of ZnSe, ZnS and ZnSSe 94
Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on (100)GaAs 93
Low pressure MOVPE growth of ZnS epilayers by using dimethyldisulphide precursor 91
Intrinsic defects of ZnS epitaxial layers grown by MOVPE 90
Functional validation of novel Se and S alkyl precursors for the low temperature pyrolytic MOVPE 89
Non destructive characterization of MOVPE-grown CdTe and ZnTe epilayers by nanosecond and picosecond 89
Study on instability phenomena in CdTe diode-like detectors 89
Photoluminescence of CVD grown CdS epilayers on CdTe substrates 89
Structural characterization of ZnSe/ZnMgSe MQWs grown on (100)GaAs by low pressure MOVPE 87
MOVPE Growth of Wide Band-Gap II—VI Compounds for Near-UV and Deep-Blue Light Emitting Devices 87
CROWDING TREATMENT WITH ALIGNERS: STRATEGIES AND PREDICTABILITY-A SYSTEMATIC REVIEW 87
Structural and electrical properties of CdTe layers grown on ZnTe/GaAs by hydrogen transport VPE 86
Low temperature MOVPE growth and characterisation of ZnS using diethyldisulphide as sulphur precursor 86
Vapor phase epitaxy growth of CdTe epilayers for RT x-ray detectors 85
Structural properties of MOVPE-grown ZnMgSe epilayers and ZnSe/ZnMgSe MQWs on (100)GaAs 85
Self-organized growth of ZnTe nanoscale islands on (001)GaAs 85
Structural and optical properties of MOVPE-grown ZnMgSe epilayers and ZnSe/ZnMgSE multiple quantum wells 84
Homoepitaxy of ZnTe on (100) oriented substrates: technology issues and MOVPE growth aspects 84
Study on Instability Phenomena in CdTe Diode-like Detectors 84
Nondestructive characterisation of MOVPE-grown CdTe and ZnTe epilayers by picosecond and nanosecond "excite-probe" techniques 84
Lattice strain and band offsets determination in ZnSe/ZnS short-period superlattices grown by MOVPE on (100)GaAs 84
Electric toothbrush vs. sonic toothbrush, the effectiveness on gingival inflammation: a randomized clinical trial 83
Nonradiative and radiative recombination processes of ZnS epitaxial layers 83
PRIN - Sviluppo di rivelatori a CdTe per raggi X e gamma di nuova generazione: rivelatori a contatti epitassiali. II anno 83
Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on (100)GaAs 82
Studies of carrier dynamics in epitaxial heterostructures by nonlinear optical and microwave techniques 81
Nonequilibrium carrier dynamics in MOVPE-grown homoepitaxial ZnTe layers and substrate material 80
Totale 11.214
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Categoria #
all - tutte 58.001
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 58.001
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021472 0 0 0 0 0 103 3 104 8 116 36 102
2021/2022409 4 10 25 59 74 1 6 41 6 5 34 144
2022/20232.415 117 133 82 54 119 118 37 67 1.615 5 46 22
2023/2024579 36 30 21 47 45 46 3 9 64 136 125 17
2024/20252.604 30 9 29 15 127 376 143 140 904 199 260 372
2025/20264.065 576 897 773 937 695 187 0 0 0 0 0 0
Totale 12.491